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| SD101AW / 101BW / 101CW Vishay Semiconductors Small Signal Schottky Diodes Features * For general purpose applications * The low forward voltage drop and fast switching make it ideal for protection of e3 MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. * The SD101 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. * These diodes are also available in the Mini-MELF case with type designations LL101A to LL101C, in the DO-35 case with type designations SD101A through SD101C and in the SOD-323 case with type designations SD101AWS through SD101CWS. * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-123 Plastic case Weight: approx. 9.3 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part SD101AW SD101BW SD101CW Ordering code SD101AW-GS18 or SD101AW-GS08 SD101BW-GS18 or SD101BW-GS08 SD101CW-GS18 or SD101CW-GS08 SA SB SC Type Marking Remarks Tape and Reel Tape and Reel Tape and Reel Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Peak reverse voltage Test condition Part SD101AW SD101BW SD101CW Power dissipation (Infinite heatsink) Forward current Maximum single cycle surge 10 s square wave Symbol VRRM VRRM VRRM Ptot IF IFSM Value 60 50 40 4001) 30 2 Unit V V V mW mA A Document Number 85679 Rev. 1.4, 16-Dec-05 www.vishay.com 1 SD101AW / 101BW / 101CW Vishay Semiconductors Thermal Characteristics Tamb = 25 C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) Test condition Symbol RthJA Tj Tstg Value 3001) 1251) - 65 to + 150 Unit K/W C C Valid provided that electrodes are kept at ambient temperature Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Reverse breakdown voltage Test condition IR = 10 A Part SD101AW SD101BW SD101CW Leakage current VR = 50 V VR = 40 V VR = 30 V Forward voltage drop IF = 1 mA SD101AW SD101BW SD101CW SD101AW SD101BW SD101CW IF = 15 mA SD101AW SD101BW SD101CW Diode capacitance VR = 0 V, f = 1 MHz SD101AW SD101BW SD101CW Reverse recovery time IF = IR = 5 mA, recover to 0.1 IR Symbol V(BR)R V(BR)R V(BR)R IR IR IR VF VF VF VF VF VF Ctot Ctot Ctot trr Min 60 50 40 200 200 200 0.41 0.40 0.39 1.0 0.95 0.90 2.0 2.1 2.2 1 Typ. Max Unit V V V nA nA nA V V V V V V pF pF pF www.vishay.com 2 Document Number 85679 Rev. 1.4, 16-Dec-05 SD101AW / 101BW / 101CW Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 10 A B C 2.0 C T - Typical Capacitance ( pF ) I F - Forward Current ( mA ) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 20 A B T j = 25 C 1 C 0.1 0.01 18477 0 0.2 0.4 0.6 0.8 1.0 18480 30 40 50 VF - Forward Voltage ( V ) VR - Reverse Voltage ( V ) Figure 1. Typical Variation of Forward Current vs. Forward Voltage Figure 4. Typical Capacitance Curve as a Function of Reverse Voltage 100 I F - Forward Current ( mA ) 80 60 40 A B C 20 0 0 0.2 0.4 0.6 0.8 1.0 18478 VF - Forward Voltage ( V ) Figure 2. Typical Forward Conduction Curve 100 I R - Reverse Current ( A ) 150 C 125 C 10 100 C 75 C 50 C 1 0.1 25 C 0.01 0 10 20 30 40 50 18479 VR - Reverse Voltage ( V ) Figure 3. Typical Variation of Reverse Current at Various Temperatures Document Number 85679 Rev. 1.4, 16-Dec-05 www.vishay.com 3 SD101AW / 101BW / 101CW Vishay Semiconductors Package Dimensions in mm (Inches) 1.35 (0.053) max. 0.1 (0.004) max. 0.55 (0.022) 0.25 (0.010) min. 0.15 (0.006) max. Mounting Pad Layout ISO Method E Cathode Band 3.85 (0.152) 2.85 (0.112) 2.55 (0.100) 3.55 (0.140) 1.40 (0.055) 1.70 (0.067) 1.40 (0.055) 0.72 (0.028) 2.40 (0.094) 17432 www.vishay.com 4 Document Number 85679 Rev. 1.4, 16-Dec-05 SD101AW / 101BW / 101CW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85679 Rev. 1.4, 16-Dec-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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